Semiconductor device and manufacturing method thereof

ABSTRACT

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

The present application is a CONTINUATION of U.S. patent applicationSer. No. 15/973,799, filed May 8, 2018, titled “Semiconductor Device andManufacturing Method Thereof,” expected to issue as U.S. Pat. No.10,297,466; which is a CONTINUATION of U.S. patent application Ser. No.15/397,052, filed Jan. 3, 2017, titled “Semiconductor Device andManufacturing Method thereof,” now U.S. Pat. No. 9,966,276; which is aCONTINUATION of U.S. patent application Ser. No. 14/671,095, filed Mar.27, 2015, titled “Semiconductor Device and Manufacturing Methodthereof,” now U.S. Pat. No. 9,536,858; which is a CONTINUATION of U.S.patent application Ser. No. 13/726,917, filed Dec. 26, 2012, titled“Semiconductor Device and Manufacturing Method thereof,” now U.S. Pat.No. 9,000,586; which makes reference to, claims priority to, and claimsthe benefit of Korean Patent Application No. 10-2012-0126932, filed onNov. 9, 2012 in the Korean Intellectual Property Office and titled“SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,” the contents ofeach of which are hereby incorporated herein by reference, in theirentirety.

FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

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SEQUENCE LISTING

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MICROFICHE/COPYRIGHT REFERENCE

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BACKGROUND

Present systems, methods and/or architectures for forming electronicpackages having interposers are inadequate. Further limitations anddisadvantages of conventional and traditional approaches will becomeapparent to one of skill in the art, through comparison of suchapproaches with the present invention as set forth in the remainder ofthe present application with reference to the drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the present disclosure and, together with thedescription, serve to explain principles of the present disclosure. Inthe drawings:

FIG. 1 illustrates a cross-sectional view of a semiconductor deviceaccording to an embodiment;

FIG. 2 illustrates a cross-sectional view of a semiconductor deviceaccording to another embodiment;

FIGS. 3A to 3F illustrate cross-sectional views sequentially showing amethod of manufacturing a semiconductor device according to anotherembodiment;

FIGS. 4A to 4D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer in a method of manufacturinga semiconductor device according to another embodiment;

FIGS. 5A to 5E illustrate cross-sectional views of a method ofmanufacturing a rear part of the interposer in the method ofmanufacturing the semiconductor device according to another embodiment;

FIGS. 6A to 6D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer in a method of manufacturinga semiconductor device according to another embodiment;

FIGS. 7A to 7E illustrate cross-sectional views of a method ofmanufacturing a rear part of the interposer in the method ofmanufacturing the semiconductor device according to another embodiment;

FIGS. 8A to 8D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer in a method of manufacturinga semiconductor device according to another embodiment; and

FIGS. 9A to 9E illustrate cross-sectional views of a method ofmanufacturing a rear part of the interposer in the method ofmanufacturing the semiconductor device according to another embodiment.

DETAILED DESCRIPTION OF VARIOUS ASPECTS OF THE INVENTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings. However, the various aspects ofthe present invention may be embodied in different forms, and thus theprovided exemplary embodiments should not be construed as limiting.

Various embodiments relate to a semiconductor device and a manufacturingmethod thereof. Generally, after a semiconductor die is mounted on aninterposer, one semiconductor device in which the interposer is stackedon the other semiconductor die or substrate is called a 2.5D package.Commonly, 3D packages represent semiconductor devices in which onesemiconductor die is stacked on the other semiconductor die or substratewithout an interposer.

However, the above-described 2.5D package should have a plurality ofthrough silicon vias so that electrical signals flow between an uppersemiconductor die and a lower semiconductor die or substrate. Thus, inthe semiconductor device according to the related art, the throughsilicon vias as well as circuit patterns should be formed in theinterposer. As a result, manufacturing costs may be expensive, and also,the semiconductor device may be increased in thickness.

An example aspect of the present invention provides a semiconductordevice including an interposer having a relatively thin thicknesswithout a through silicon via and a method of manufacturing the same.

Another example aspect of the present invention provides a semiconductordevice in which a redistribution layer having the fine pitch with asubmicron unit is capable of being formed since, for example, aninterposer is formed on a dummy substrate formed of silicon or glass,and which is capable of being manufactured using various materials andrealized in an embedded passive structure and a method of manufacturingthe same.

According to at least one of embodiments, a method of manufacturing asemiconductor device includes: forming an interposer including aredistribution layer and a dielectric layer on a dummy substrate;connecting a semiconductor die to the redistribution layer facing anupper portion of the interposer; encapsulating the semiconductor die byusing an encapsulation; removing the dummy substrate from theinterposer; and connecting a bump to the redistribution layer facing alower portion of the interposer.

The dummy substrate may, for example, include a silicon or glass. Thedielectric layer may, for example, include a silicon oxide layer, asilicon nitride layer, or a polymer layer. A solder may, for example, beformed on the redistribution layer facing the upper portion of theinterposer, and the semiconductor die may be connected to the solder.

After the connection of the semiconductor die, an underfill may, forexample, be filled between the semiconductor die and the interposer.After the encapsulating of the semiconductor die, the encapsulant may,for example, be ground to expose a top surface of the semiconductor die.The removing of the dummy substrate may, for example, include grindingand etching the dummy substrate to expose the redistribution layerfacing the lower portion of the interposer.

The connection of the bump may, for example, include: forming an underbump metal on the redistribution layer facing the lower portion of theinterposer; and connecting the bump to the under bump metal. The formingof the interposer may, for example, include previously forming an underbump metal on the redistribution layer facing the lower portion of theinterposer.

After the connection of the bump, the bump may, for example, be mountedon a circuit board. An underfill may, for example, be filled between theinterposer and the circuit board. A cover may, for example, be attachedto the circuit board to cover the semiconductor die.

The forming of the interposer may, for example, include: forming a seedlayer on the dummy substrate; forming and patterning the redistributionlayer on the seed layer; forming the dielectric layer outside theredistribution layer; grinding and removing the dummy substrate; andremoving the seed layer.

The forming of the interposer may, for example, include: forming a seedlayer on the dummy substrate; forming an under bump metal on the seedlayer; forming and patterning the redistribution layer on the under bumpmetal; forming the dielectric layer outside the redistribution layer;grinding and removing the dummy substrate; and removing the seed layer.The patterning of the under bump metal may, for example, includeremoving the seed layer formed outside the under bump metal.

According to another embodiment, a semiconductor device includes: aninterposer including a redistribution layer and a dielectric layer; asemiconductor die connected to the redistribution layer facing an upperportion of the interposer; encapsulant encapsulating the semiconductordie; and a bump connected to the redistribution layer facing a lowerportion of the interposer.

The dielectric layer may, for example, include a silicon oxide layer, asilicon nitride layer, or a polymer layer. A solder may, for example, beformed on the redistribution layer facing the upper portion of theinterposer, and the semiconductor die may be connected to the solder. Anunderfill may, for example, be filled between the semiconductor die andthe interposer. A top surface of the semiconductor die may, for example,be exposed through the encapsulant.

An under bump metal may, for example, be disposed between theredistribution layer facing the lower portion of the interposer and thebump. The under bump metal may, for example, be disposed inside theinterposer. The bump may, for example, be mounted on a circuit board. Anunderfill may, for example, be filled between the interposer and thecircuit board. A cover may, for example, be attached to the circuitboard to cover the semiconductor die.

Various example embodiments will now be described more fully hereinafterwith reference to the accompanying drawings.

Embodiments may be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the disclosure to thoseskilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. As used herein, the term and/orincludes any and all combinations of one or more of the associatedlisted items.

In the following description, the technical terms are used only forexplaining a specific exemplary embodiment while not limiting thepresent disclosure. The terms of a singular form may include pluralforms unless referred to the contrary. The meaning of “include,”“comprise,” “including,” or “comprising,” specifies a property, aregion, a fixed number, a step, a process, an element and/or a componentbut does not exclude other properties, regions, fixed numbers, steps,processes, elements and/or components.

Also, though terms like a first and a second are used to describevarious members, components, regions, layers, and/or portions in variousembodiments of the present invention, the members, components, regions,layers, and/or portions are not limited to these terms. These terms areused only to differentiate one member, component, region, layer, orportion from another one. Therefore, a member, a component, a region, alayer, or a portion referred to as a first member, a first component, afirst region, a first layer, or a first portion in an embodiment can bereferred to as a second member, a second component, a second region, asecond layer, or a second portion in another embodiment.

Also, the terms “semiconductor die” used in this specification may, forexample, include a semiconductor chip having an active circuit or apassive circuit, a semiconductor wafer, or its equivalent. Also, in thisspecification, a dummy substrate may, for example, include silicon,glass, or its equivalent. Also, in this specification, a dielectriclayer may, for example, include silicon, glass, or its equivalent.

FIG. 1 illustrates a cross-sectional view of a semiconductor deviceaccording to an embodiment.

Referring to FIG. 1, a semiconductor device 100 according to anembodiment includes an interposer 110, a semiconductor die 120, anunderfill 130, an encapsulant 140, and a bump 150.

The interposer 110 includes a redistribution layer 111 and a dielectriclayer 112. For example, the interposer 110 may include a redistributionlayer 111 having a multi-layered structure, and the redistribution layer111 may be protected by the dielectric layer 112. The redistributionlayer 111 disposed on each of bottom and top surfaces is directlyexposed through the dielectric layer 112. Also, the redistribution layer111 disposed on each of the bottom and top surface of the dielectriclayer 112 may, for example, have a relatively large width so that thebump is easily formed later. As described above, the portion of theredistribution layer 111 having the relatively large width may, forexample, be defined as a pad or land.

Here, the redistribution layer 111 may, for example, be formed of oneselected from copper, aluminum, and their equivalents. Also, thedielectric layer 112 may, for example, be formed of one selected from asilicon oxide layer, a silicon nitride layer, a polymer layer, and theirequivalents. However, the present disclosure is not limited to thesematerials. As an example, when the silicon oxide layer or the siliconnitride layer is used as the dielectric layer 112, the redistributionlayer 111 may, for example, have a fine pitch with a submicron unit. Insome cases, a passive device may be embedded. This may, for example, bedone because the redistribution layer 111 and the dielectric layer 112may be patterned by using a line width embodied in a semiconductorfabrication (FAB) process when the dielectric layer 112 includes thesilicon oxide layer or the silicon nitride layer. As previously known,the line width embodied in a package process may be significantlygreater than that embodiment in the semiconductor FAB process.Furthermore, since the interposer 110 might not need through siliconvias, unlike a related art, the interposer 110 may have a thin thicknessand be manufactured with low costs.

The semiconductor die 120 may, for example, include a common memory, agraphics processing unit (GPU), a central processing unit (CPU), or itsequivalent. However, the present disclosure is not limited to thesekinds. The semiconductor die 120 includes a connection terminal 121electrically connectable to the interposer 110. As illustrated, theconnection terminal 121 may, for example, include a copper pillar 121 aand a solder cap 121 b disposed on an end of the copper pillar 121 a.The connection terminal 121 may, for example, include a common solderbump. Also, a solder 122 may be previously disposed between theconnection terminal 121 and the interposer 110, i.e., on a top surfaceof the redistribution layer 111 facing an upper portion of theinterposer 110 to easily connect the interposer 110 to the connectionterminal 121. As a result, the semiconductor die 120 may be electricallyconnected to the redistribution layer 111 facing the upper portion ofthe interposer 110.

The underfill 130 is filled between the interposer 110 and thesemiconductor die 120. More particularly, the underfill 130 may bedisposed between the interposer 110 and the semiconductor die 120 andalso surround a side surface of a lower portion of the semiconductor die120. The underfill 130 may, for example, improve physical/mechanicalcoupling between the interposer 110 and the semiconductor die 120. Inaddition, the underfill 130 may prevent the interposer 110 and thesemiconductor die 120 from being separated from each other by a stressdue to, for example, a difference in the respective coefficients ofthermal expansion between the interposer 110 and the semiconductor die120.

The encapsulant 140 surrounds the semiconductor die 120 disposed abovethe interposer 110 to protect the semiconductor die against externalenvironments. More particularly, the encapsulant 140 surrounds surfacesof the semiconductor die 120 and the underfill 130. However, a topsurface of the semiconductor die 120 may be exposed to the outside fromthe encapsulant 140 to improve heat dissipation performance of thesemiconductor die 120.

Here, a side surface of the encapsulant 140 may be flush with a sidesurface of the interposer 110. Also, a top surface of the encapsulant140 may be flush with the top surface of the semiconductor die 120. As aresult, the semiconductor device 100 according to the current embodimentmay have a compact structure.

The bump 150 is connected to the redistribution layer 111 facing a lowerportion of the interposer 110. More particularly, a bump metal 113 isdisposed on the redistribution layer 111 exposed through a bottomsurface of the interposer 110, and then the bump 150 is connected to thebump metal 113. The bump 150 may, for example, have a relatively smallsize when compared to that of a common solder ball. Thus, the bump 150may be defined as a micro bump. For example, the bump 150 may have adiameter of about 100 μm or less. However, a solder ball that will bedescribed below may have a diameter of about 200 μm to about 400 μm.

Therefore, the semiconductor device 100 according to the currentembodiment may be, for example, manufactured in a flip chip shape. Thus,the semiconductor device 100 having the flip chip shape may, forexample, be mounted on a circuit board for common semiconductor deviceor semiconductor package. Alternatively, the semiconductor device 100according to the current embodiment may be mounted on a mother board ora main board.

Therefore, the current embodiment may, for example, provide thesemiconductor device 100 (flip chip device) having the interposer 110having a relatively thin thickness without through silicon vias. Also,since, for example, the current embodiment uses the silicon oxide layeror the silicon nitride layer, which are formed of a nonorganic material,the redistribution layer 111 having the fine pitch with the submicronunit may be provided. Also, the current embodiment may, for example,provide the semiconductor device 100 including the interposer 110 whichmay be realized in an embedded passive structure.

FIG. 2 illustrates a cross-sectional view of a semiconductor deviceaccording to another embodiment.

Referring to FIG. 2, a semiconductor device 200 according to anotherembodiment includes the above-described device 100 (hereinafter,referred to as a flip chip device), a circuit board 210, an underfill220, a cover 230, a thermal conductive adhesive 240, and a solder ball250.

As described above, the flip chip device 100 has the bottom surface onwhich the bump 150 is disposed. The bump 150 is mounted on the circuitboard 210.

The circuit board 210 includes a circuit pattern 211 and an insulationlayer 212. Furthermore, a passive device 260 may, for example, bemounted on the circuit board 210. Also, as described above, the bump 150of the flip chip device 100 is electrically connected to the circuitpattern 211 of the circuit board 210.

The underfill 220 is filled between the interposer 100 and the circuitboard 210. That is, the underfill 220 surrounds the bump 150 as well asside surfaces of the interposer 110 of the flip chip device 100 and theencapsulant 140. Thus, it may prevent the flip chip device 100 and thecircuit board 210 from being separated from each other by a stress dueto a difference in respective coefficients of thermal expansion betweenthe flip chip device 100 and the circuit board 210.

The cover 230 may be attached to the circuit board 210 and alsoapproximately surround the flip chip device 100. Thus, the flip chipdevice 100 may be protected against external environments by the cover230. The cover may, for example, be formed of a metal, ceramic, or itsequivalent to improve heat dissipation performance, but the presentdisclosure is not limited thereto.

The thermal conductive adhesive 240 is disposed between the flip chipdevice 100 and the cover 230 and between the cover 230 and the circuitboard 210. The thermal conductive adhesive 240 may quickly transfer heatgenerated from the flip chip device 100 into the cover 230. Also, thethermal conductive adhesive 240 may fix the cover 230 to the flip chipdevice 100 and the circuit board 210.

The solder ball 250 is connected to a bottom surface of the circuitboard 210. That is, the solder ball 250 is electrically connected to thecircuit pattern 211 of the circuit board 210. Due to the solder ball250, the semiconductor device 200 according to the current embodimentmay, for example, be mounted on a mother board or main board ofelectronic equipment such as a computer, a smart phone, and the like.

Therefore, the current embodiment may, for example, provide a 2.5Dsemiconductor device including the semiconductor device 100 (flip chipdevice) having the interposer 110 having a relatively thin thicknesswithout through silicon vias. Also, since, for example, the currentembodiment uses a silicon oxide layer or a silicon nitride layer whichare formed of a nonorganic material, a redistribution layer 111 having afine pitch with a submicron unit may be provided. Also, the currentembodiment may provide the semiconductor device 200 including thesemiconductor device 100 including the interposer 110 which may berealized in an embedded passive structure.

FIGS. 3A to 3F illustrate cross-sectional views sequentially showing amethod of manufacturing a semiconductor device according to anotherembodiment.

Referring to FIGS. 3A to 3F, a method of manufacturing a semiconductordevice 100 according to an embodiment includes forming an interposer 110on a dummy substrate 310, connecting a semiconductor die 120 to theinterposer 110, encapsulating the semiconductor die 120 by using anencapsulant 140, grinding the encapsulant 140, grinding the dummysubstrate 310, and connecting a bump 150. This will now be described indetail.

As shown in FIGS. 3A and 3B, in the forming of the interposer 110 on thedummy substrate 310, the interposer 110 is directly formed on the dummysubstrate 310. That is, the interposer 110 including a redistributionlayer 111 and a dielectric layer 112 is directly formed on the dummysubstrate 310. As described above, the redistribution layer 111 may, forexample, have a multi-layered structure. The redistribution layer 111(which may be defined as a pad or land) having a relatively large widthmay be formed on each of top and bottom surfaces of the dielectric layer112. Here, the redistribution layer 111 may, for example, be formed ofone selected from copper, aluminum, and their equivalents. Also, thedielectric layer 112 may, for example, be formed of one selected from asilicon oxide layer, a silicon nitride layer, a polymer layer, and theirequivalents. However, the present disclosure is not limited to thesematerials. Furthermore, a solder 122 may, for example, be previouslyformed on the redistribution layer 111 (a pad or land) formed on a topsurface of the dielectric layer 112 to easily electrically connect thesemiconductor die 120 thereto later. Here, the dummy substrate 310 may,for example, be formed of one of silicon, glass, and their equivalents.However, the present disclosure is not limited to a kind of dummysubstrate 310. As described above, since, for example, a silicon oxidelayer or a silicon nitride layer that is formed of a nonorganic materialis used as the dummy substrate 310, the redistribution layer 111 havinga fine pitch and fine width may be formed.

As shown in FIG. 3C, in the connecting of the semiconductor die 120 tothe interposer 110, the semiconductor die 120 is electrically connectedto the interposer 110. That is, a connection terminal 121 (a copperpillar 121 a and a solder cap 121 b) of the semiconductor die 120 iselectrically connected to the solder 122 which is previously formed onthe interposer 110. Furthermore, an underfill 130 is filled between theinterposer 110 and the semiconductor die 120. The underfill 130 covers alower region of a side surface of the semiconductor die 120.

As shown in FIG. 3D, in the encapsulating of the semiconductor die 120by using the encapsulant 140, the semiconductor die 120 is encapsulatedon the interposer 110 by using the encapsulant 140. That is, surfaces ofthe underfill 130 and the semiconductor die 120 which are formed on theinterposer 110 may be surrounded by the encapsulant 140.

As shown in FIG. 3E, in the grinding of the encapsulant 140, theencapsulant 140 formed on the semiconductor die 120 is ground andremoved by a predetermined thickness. For example, the encapsulant 140may be ground and removed until a top surface of the semiconductor die120 is exposed to the outside.

As shown in FIG. 3F, in the grinding of the dummy substrate 310, thedummy substrate 310 disposed under the interposer 110 is ground and/oretched, and thus removed. Thus, the redistribution layer 111 (the pad orland) is exposed to the outside through a lower portion of theinterposer 110.

Although not shown, an under bump metal 113 may be formed on theredistribution layer 111 exposed through the lower portion of theinterposer 110 as described above, and the bump 150 may be connected tothe under bump metal 113. (see FIG. 1)

Furthermore, in the formed semiconductor device 100, i.e., the flip chipdevice 100, the bump 150 may be mounted on the circuit board 210. Also,an underfill 220 may, for example, be formed between the flip chipdevice 100 and the circuit board 210. Furthermore, a cover 230 may, forexample, be attached to the flip chip device 100 and the circuit board210 through a thermal conductive adhesive 240. Also, the solder ball 250may be connected to a bottom surface of the circuit board 210, whichmay, for example, form the 2.5D package device 200. (see FIG. 2)

Therefore, the current embodiment may, for example, provide the methodof manufacturing the semiconductor device 100 having the interposer 110having a relatively thin thickness without through silicon vias and thesemiconductor device 200 including the semiconductor device 100. Also,since, for example, the interposer 110 is formed on the dummy substrate310 formed of silicon or glass, the redistribution layer 111 having afine pitch with a submicron unit may be formed. In addition, the currentembodiment may provide the method of manufacturing the semiconductordevice 100 including the interposer 110 which may, for example, beformed using various materials and realized in an embedded passivestructure and the semiconductor device 200 including the semiconductordevice 100.

FIGS. 4A to 4D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer 110 in a method ofmanufacturing a semiconductor device 100 according to anotherembodiment. FIGS. 5A to 5E illustrate cross-sectional views of a methodof manufacturing a rear part of the interposer 110 in the method ofmanufacturing the semiconductor device 100 according to anotherembodiment.

As shown in FIGS. 4A to 4D and 5A to 5E, the method of forming theinterposer 110 includes forming a seed layer 311 on a dummy substrate310, patterning a redistribution layer 111, etching the seed layer 311,forming a dielectric layer 112, removing the dummy substrate 310, andremoving the seed layer 311. This will now be described in detail.

As shown in FIG. 4A, in the forming of the seed layer 311 on the dummysubstrate 310, a titanium layer 311 a/copper layer 311 b or atitanium/tungsten layer 311 a/copper layer 311 b may, for example, beformed on an entire top surface of the dummy substrate 310 to providethe seed layer 311 that will be used for plating the redistributionlayer 111 later.

As shown in FIG. 4B, in the patterning of the redistribution layer 111,the redistribution layer 111 is patterned and formed on the seed layer311. That is, after a copper layer or an aluminum layer is plated on anentire top surface of the seed layer 311, a photolithography process isperformed to form the redistribution layer 111 having a predeterminedpattern. Here, the seed layer 311 formed outside the redistributionlayer 111 is not removed yet.

As shown in FIG. 4C, in the etching of the seed layer 311, for example,the copper layer 311 b of the seed layer 311 formed outside theredistribution layer 111 is etched and removed. That is, the titaniumlayer or the titanium/tungsten layer 311 a remains still.

As shown in FIG. 4D, in the forming of the dielectric layer 112, thedielectric layer 112 is formed around the redistribution layer 111.Furthermore, the forming of the redistribution layer 111 and thedielectric layer 112 may be performed several times. That is, theredistribution layer 111 and the dielectric layer 112 may build up onthe dummy substrate 310 several times. On the other hand, since, forexample, the redistribution layer 111 and the dielectric layer 112alternately build up, the required redistribution layer 111 may beformed. Thus, the interposer 110 may have a small size and thinthickness. In addition, a passive structure may be embedded in theinterposer 110.

Here, the redistribution layer 111 formed on each of the uppermost andlowermost portions of the dielectric layer 112 may, for example, have arelatively wide width (pad or land).

As shown in FIGS. 5A to 5C, in the removing of the dummy substrate 310,the dummy substrate 310 on which the interposer 110 is mounted isremoved. That is, as shown in FIGS. 5A and 5B, a portion of the dummysubstrate 310 having a relatively thick thickness is removed by thegrinding process, and then, a remaining portion having a relatively thinthickness is removed by the etching process. As a result, as shown inFIG. 5C, the titanium layer or the titanium/tungsten layer 311 a of theseed layer 311 is exposed to the outside.

As shown in FIG. 5D, in the removing of the seed layer 311, the seedlayer 311 remaining on the interposer 110, i.e., the titanium layer orthe titanium/tungsten layer 311 a is removed. Thus, the redistributionlayer 111 having a relatively wide width in the interposer 110 isexposed to the outside through the dielectric layer 112.

Furthermore, as shown in FIG. 5E, after the seed layer 311 is removed,an under bump metal 113 may be formed on the redistribution layer 111exposed through the dielectric layer 112, and then, a bump 150 may beconnected to the under bump metal 113. Thus, the under bump metal 113protrudes from the dielectric layer 112, and the bump 150 approximatelysurrounds the under bump metal 113.

FIGS. 6A to 6D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer 110 in a method ofmanufacturing a semiconductor device 100 according to anotherembodiment. FIGS. 7A to 7E illustrate cross-sectional views of a methodof manufacturing a rear part of the interposer 110 in the method ofmanufacturing the semiconductor device 100 according to anotherembodiment.

As shown in FIGS. 6A to 6D and 7A to 7E, the method of forming theinterposer 110 includes forming a seed layer 311 on a dummy substrate310, forming an under bump metal 113 on the seed layer 311, etching theseed layer 311, forming a redistribution layer 111, forming a dielectriclayer 112, removing the dummy substrate 310, and removing the seed layer311. This will now be described in detail.

As shown in FIG. 6A, in the forming of the seed layer 311 on the dummysubstrate 310, a titanium layer 311 a/copper layer 311 b or atitanium-tungsten layer 311 a/copper layer 311 b may, for example, beformed on an entire top surface of the dummy substrate 310 to providethe seed layer 311.

As shown in FIG. 6B, in the forming of the under bump metal 113 on theseed layer 311, for example, a gold layer 113 a, a nickel layer 113 b,and a copper layer or an aluminum layer 113 c are sequentially formed onthe seed layer 311 to form the under bump metal 113.

As shown in FIG. 6C, in the etching of the seed layer 311, for example,the copper layer of the seed layer 311 remaining outside the under bumpmetal 113 is etched and removed. That is, the titanium layer or thetitanium-tungsten layer 311 a remains still.

As shown in FIG. 6D, in the forming of the redistribution layer 111 andthe forming of the dielectric layer 112, the redistribution layer 111 ispatterned on the under bump metal 113, and also the dielectric layer 112is formed therearound. That is, after a copper layer or an aluminumlayer is plated on the under bump metal 113, a photolithography processis performed to form the redistribution layer 111 having a predeterminedpattern. Also, the dielectric layer 112 is formed around theredistribution layer 111. Furthermore, the forming of the redistributionlayer 111 and the dielectric layer 112 may be performed several times.That is, the above-described build up process may be performed.

Here, the redistribution layer 111 formed on the uppermost surface ofthe interposer 110 and having a relatively wide width may, for example,be defined as a pad or land.

As shown in FIGS. 7A to 7C, in the removing of the dummy substrate 310,the dummy substrate 310 on which the interposer 110 is mounted isremoved. That is, as shown in FIGS. 7A and 7B, a portion of the dummysubstrate 310 having a relatively thick thickness is removed by thegrinding process, and then, a remaining portion having a relatively thinthickness is removed by the etching process. As a result, as shown inFIG. 7C, the titanium layer or the titanium/tungsten layer 311 a of theseed layer 311 is exposed to the outside.

As shown in FIG. 7D, in the removing of the seed layer 311, the seedlayer 311 remaining on the interposer 110, i.e., the titanium layer orthe titanium/tungsten layer 311 a is removed. Thus, the under bump metal113 is exposed to the outside through the dielectric layer 112. That is,bottom and side surfaces of the under bump metal 113 are disposed withinthe dielectric layer 112. Also, only a top surface of the under bumpmetal 113 is exposed to the outside through the dielectric layer 112.That is to say, the exposed surface of the under bump metal 113 is flushwith the exposed surface of the dielectric layer 112.

Furthermore, as shown in FIG. 7E, after the seed layer 311 is removed, abump 150 is connected to the under bump metal 113 exposed through thedielectric layer 112. That is, since, for example, the under bump metal113 is previously formed in the forming of the interposer 110, it may beunnecessary to form the under bump metal 113 through a separate processfor connecting the bump 150 later. Alternatively, due to these processcharacteristics, the under bump metal 113 is not disposed inside thebump 150.

FIGS. 8A to 8D illustrate cross-sectional views of a method ofmanufacturing a front part of an interposer 110 in a method ofmanufacturing a semiconductor device 100 according to anotherembodiment. FIGS. 9A to 9E illustrate cross-sectional views of a methodof manufacturing a rear part of the interposer 110 in the method ofmanufacturing the semiconductor device 100 according to anotherembodiment.

As shown in FIGS. 8A to 8D and 9A to 9E, the method of manufacturing theinterposer 110 according to the current embodiment is similar to thataccording to the foregoing embodiments. However, as shown in FIG. 8C,the method of manufacturing the interposer 110 according to the currentembodiment is different from that according to the foregoing embodimentsin that a seed layer 311 formed outside an under bump metal 113 iscompletely removed in etching of the seed layer 311. That is, as shownin FIG. 8C, the seed layer 311 does not remain outside the under bumpmetal 113. Also, as shown in FIGS. 9C and 9D, it may be that the seedlayer 311 formed on the under bump metal 113 is removed before a solderis connected to a bump. Thus, an exposed surface of the under bump metal113 is not flush with an exposed surface of a dielectric layer 112. Thatis, the exposed surface of the under bump metal 113 is disposed at aposition lower than that of the exposed surface of the dielectric layer112. Thus, a side portion of the bump 150 contacts the dielectric layer112.

Embodiments provide the semiconductor device including the interposerhaving a relatively thin thickness without through silicon vias and themethod of manufacturing the same.

Also, since, for example, the interposer is formed on the dummysubstrate formed of silicon or glass, for example, the redistributionlayer having the fine pitch with a submicron unit may be formed. Inaddition, the embodiments may provide the method of manufacturing thesemiconductor device including the interposer which may be formed usingvarious materials and realized in the embedded passive structure and thesemiconductor device including the same.

Exemplary embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation.Accordingly, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made without departingfrom the spirit and scope of the present disclosure as set forth in thefollowing claims.

What is claimed is:
 1. A method of manufacturing an electronic device,the method comprising: receiving a first structure comprising: asubstrate; an Under Bump Metal (UBM) structure on the substrate; and aninterposer on the substrate and on the UBM structure, the interposercomprising: a conductive material on the UBM structure; and a dielectricmaterial that covers the substrate, laterally surrounds the conductivematerial, and laterally surrounds the UBM structure; removing thesubstrate from the first structure; and after said removing thesubstrate, coupling a conductive interconnection structure to the UBMstructure.
 2. The method of claim 1, wherein the UBM structure comprisesa sidewall that is entirely embedded in the dielectric material.
 3. Themethod of claim 2, wherein the UBM structure comprises a top side thatis exposed from the dielectric material, coupled to the interconnectionstructure, and entirely recessed in the dielectric material.
 4. Themethod of claim 1, wherein the UBM structure comprises at least threedistinct layers of material that are laterally contacted and surroundedby the dielectric material.
 5. The method of claim 1, wherein: the firststructure comprises a seed structure between the substrate and the UBMstructure; and the dielectric material contacts and laterally surroundsat least a portion of the seed structure.
 6. The method of claim 5,wherein: the seed structure comprises a first seed layer and a secondseed layer; the dielectric material contacts and laterally surrounds atleast the second seed layer; the method comprises removing at least aportion of the first seed layer; and said coupling the conductiveinterconnection structure to the UBM structure comprises coupling theconductive interconnection structure to the second seed layer.
 7. Themethod of claim 6, wherein said removing at least a portion of the firstseed layer comprises removing the entire first seed layer.
 8. A methodof manufacturing an electronic device, the method comprising: receivinga first structure comprising: a substrate; a seed structure on thesubstrate; an Under Bump Metal (UBM) structure on the seed structure;and an interposer on the substrate and on the UBM structure, theinterposer comprising: a conductive material on the UBM structure; and adielectric material that covers the substrate, laterally surrounds theconductive material, laterally surrounds the UBM structure, andlaterally surrounds at least a portion of the seed structure; removingthe substrate from the first structure; removing at least a portion ofthe seed structure from the first structure; and coupling a conductiveinterconnection structure to the UBM structure.
 9. The method of claim8, wherein: the seed structure comprises a first seed layer and a secondseed layer; said removing at least a portion of the seed structure fromthe first structure comprises removing the first seed layer from thefirst structure; and said coupling the conductive interconnectionstructure to the UBM structure comprises coupling the conductiveinterconnection structure to the second seed layer.
 10. The method ofclaim 9, wherein said coupling the conductive interconnection structureto the second seed layer comprises coupling the conductiveinterconnection structure directly to the second seed layer.
 11. Themethod of claim 9, wherein the dielectric material contacts andlaterally surrounds the second seed layer.
 12. The method of claim 11,wherein the dielectric material contacts and laterally surrounds thefirst seed layer.
 13. The method of claim 9, wherein said removing thefirst seed layer from the first structure comprises forming a cavity inthe dielectric material.
 14. The method of claim 8, wherein the UBMstructure comprises a sidewall that is entirely embedded in thedielectric material.
 15. The method of claim 14, wherein the UBMstructure comprises a top side that is exposed from the dielectricmaterial, coupled to the interconnection structure, and entirelyrecessed in the dielectric material.
 16. An electronic devicecomprising: an Under Bump Metal (UBM) structure; and an interposercomprising: a conductive material on the UBM structure; and a dielectricmaterial that laterally surrounds the conductive material and laterallysurrounds the entire UBM structure; and a conductive bump on the UBMstructure.
 17. The electronic device of claim 16, wherein the UBMstructure comprises a top side that is exposed from the dielectricmaterial, coupled to the conductive bump, and entirely recessed in thedielectric material.
 18. An electronic device comprising: an Under BumpMetal (UBM) structure; and an interposer comprising: a conductivematerial on the UBM structure; and a dielectric material that laterallysurrounds the conductive material and laterally surrounds the entire UBMstructure; and a conductive bump on the UBM structure, wherein the UBMstructure comprises at least three distinct layers of material that arelaterally surrounded by the dielectric material.
 19. The electronicdevice of claim 16, comprising a seed structure between the UBMstructure and the conductive bump, wherein the seed structure comprisesan etched surface.
 20. The electronic device of claim 19, wherein thedielectric material laterally surrounds the entire seed structure. 21.The electronic device of claim 16, wherein the conductive material ofthe interposer comprises a redistribution layer.